SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 1 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 55 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 55 r ds(on) ( ? ) at v gs = 10 v 0.020 r ds(on) ( ? ) at v gs = 4.5 v 0.026 i d (a) 30 configuration single d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free SQD30N05-20L-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 55 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 30 a t c = 125 c 19 continuous source curr ent (diode conduction) a i s 30 pulsed drain current b i dm 120 single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation b t c = 25 c p d 50 w t c = 125 c 16 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 60 c/w junction-to-case (drain) r thjc 3
SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 2 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 55 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 55 v --1 a v gs = 0 v v ds = 55 v, t j = 125 c --50 v gs = 0 v v ds = 55 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 5 v v ds ??? 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.016 0.020 ? v gs = 10 v i d = 20 a, t j = 125 c - - 0.035 v gs = 10 v i d = 20 a, t j = 175 c - - 0.043 v gs = 4.5 v i d = 15 a - 0.021 0.026 forward transconductance b g fs v ds = 15 v, i d = 20 a -34-s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 938 1175 pf output capacitance c oss - 203 255 reverse transfer capacitance c rss - 86 110 total gate charge c q g v gs = 5 v v ds = 25 v, i d = 35 a -1218 nc gate-source charge c q gs -4.1- gate-drain charge c q gd -4.8- gate resistance r g f = 1 mhz 1.40 2.89 4.50 ? turn-on delay time c t d(on) v dd = 25 v, r l = 0.71 ? i d ? 35 a, v gen = 10 v, r g = 1 ? -711 ns rise time c t r -1015 turn-off delay time c t d(off) -1827 fall time c t f -58 source-drain diode ratings and characteristics b pulsed current a i sm - - 120 a forward voltage v sd i f = 80 a, v gs = 0 v -1.21.5v
SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 3 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance on-resistance vs. junction temperature transfer characteristics on-resistance vs. drain current source drain diod e forward voltage 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 10 20 30 40 50 0 5 10 15 20 25 t c = 125 c t c = - 55 c t c = 25 c i d - drain current (a) - transconductance (s) g fs 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =10 v t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0 8 16 24 32 40 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source v oltage ( v ) - drain current (a) i d 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d -drain current (a) v gs gs = 10 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain v oltage ( v ) - source current (a) i s
SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 4 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) capacitance on-resistance vs. gate-to-source voltage gate charge threshold voltage drain source breakdown vs . junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 25 30 35 40 45 50 55 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0.00 0.04 0.08 0.12 0.16 0.20 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage ( v ) 0 1 2 3 4 5 6 0 3 6 9 12 15 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 25 v i d = 35 a - 1.2 - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperature (c) 55 58 61 64 67 70 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma v ds - drain-to-source v oltage ( v ) t j - junction temperature (c)
SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 5 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 10 s , 1 s , dc i d limited 100 m s 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 6 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal im pedance junction-to-case (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67054 . 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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